PARAMETER | ION ETCHING | DEPOSITION | |||
AL | TI | TIN | |||
SOURCE | Arc source, titanium cathode | Magnetronargon | Magnetron, aluminum cathode | Magnetron, titanium cathode | Arc source, titanium cathode, nitrogen |
CURRENT | 50A | 5A | 5A | 5 A | 50 A |
BIAS | 600 V | 800 V | 100 V | 100 V | 100 V/10kHz |
SUBSTRATE TEMPERATURE | ca. 200˚C | <200˚C | <200˚C | <200˚C | ca. 200˚C |
PRESSURE | 1.2 × 10−2 mbar | 5 × 10−3 mbar | 5 × 10−3 mbar | 5 × 10−3 mbar | 1.2 × 10−2 mbar |